Title :
High-quality 1.3 μm GaInAsP/InP BH-DFB lasers with first-order gratings
Author :
Okuda, Haruhisa ; Hirayama, Yuzo ; Kinoshita, J. ; Furuyama, H. ; Uematsu, Yutaka
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
High-quality 1.3 μm GaInAsP/InP BH-DFB lasers have been demonstrated. The threshold current was 16 mA and the differential quantum efficiency was 25% per facet. A stable single-longitudinal-mode oscillation was obtained, both up to four times the threshold current and up to 85°C. These results are comparable or superior to reported results of Fabry-Perot BH lasers.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.3 micron wavelength; GaInAsP/InP BH-DFB lasers; buried heterostructure distributed feedback laser; differential quantum efficiency; first-order gratings; semiconductor laser; stable single-longitudinal-mode oscillation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830642
