• DocumentCode
    989399
  • Title

    High-quality 1.3 μm GaInAsP/InP BH-DFB lasers with first-order gratings

  • Author

    Okuda, Haruhisa ; Hirayama, Yuzo ; Kinoshita, J. ; Furuyama, H. ; Uematsu, Yutaka

  • Author_Institution
    Toshiba Corporation, Research & Development Center, Kawasaki, Japan
  • Volume
    19
  • Issue
    22
  • fYear
    1983
  • Firstpage
    941
  • Lastpage
    943
  • Abstract
    High-quality 1.3 μm GaInAsP/InP BH-DFB lasers have been demonstrated. The threshold current was 16 mA and the differential quantum efficiency was 25% per facet. A stable single-longitudinal-mode oscillation was obtained, both up to four times the threshold current and up to 85°C. These results are comparable or superior to reported results of Fabry-Perot BH lasers.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.3 micron wavelength; GaInAsP/InP BH-DFB lasers; buried heterostructure distributed feedback laser; differential quantum efficiency; first-order gratings; semiconductor laser; stable single-longitudinal-mode oscillation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830642
  • Filename
    4248179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989399