• DocumentCode
    989412
  • Title

    High quality 0.98 mu m GaInAs/GaAs/GaInP lasers grown by CBE using tertiarybutylarsine and tertiarybutylphosphine

  • Author

    Garcia, J.C. ; Maurel, P. ; Hirtz, J.P.

  • Author_Institution
    Thomson CSF, Orsay, France
  • Volume
    29
  • Issue
    5
  • fYear
    1993
  • fDate
    3/4/1993 12:00:00 AM
  • Firstpage
    432
  • Lastpage
    433
  • Abstract
    High quality GaInAs/GaAs/GaInP laser structures were grown by chemical beam epitaxy using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) under pulsed conditions. For a 300 mu m long cavity, a threshold current density of 390 A/cm2 and external quantum efficiency of 0.6 W/A (two facets) were obtained, which are typical for this kind of structure. This demonstrates the suitability of TBP and TBAs as substitutes of arsine and phosphine in chemical beam epitaxy for laser fabrication.
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; 0.98 micron; CBE growth; GaAs substrate; GaInAs-GaAs-GaInP laser structures; chemical beam epitaxy; external quantum efficiency; pulsed light output power; tertiarybutylarsine; tertiarybutylphosphine; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930289
  • Filename
    250318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989412