Title :
Use of a sputtered SiO2 coating for surface protection during ´leaky tube´ diffusion of Zn into GaAs
Author :
Edwards, J.L. ; Roedel, R.J.
Author_Institution :
Arizona State University, Center for Solid State Electronics, Tempe, USA
Abstract :
Thin SiO2 layers, deposited by low-power room-temperature sputtering, have been employed as surface protection coatings during Zn diffusion into GaAs. These layers prevent surface erosion of the GaAs, but allow the Zn diffusion to proceed with negligible attenuation. The use of arsenic over-pressure during diffusion can thus be avoided.
Keywords :
III-V semiconductors; diffusion in solids; gallium arsenide; protective coatings; semiconductor doping; sputtered coatings; zinc; GaAs:Zn; III-V semiconductors; low-power room-temperature sputtering; semiconductor doping; sputtered SiO2 coating; surface erosion; surface protection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830654
