DocumentCode
989531
Title
500 Mbit/s transmission experiment using 1.3 /spl/ mu/m wavelength InGaAsP/InP high-speed surface-emitting DH LEDs
Author
Suzuki, A. ; Nomura, Hideyuki ; Minemura, Kazuki
Author_Institution
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Volume
19
Issue
23
fYear
1983
Firstpage
963
Lastpage
965
Abstract
A 1.3 μm-wavelength high-speed surface-emitting DH LED, with 0.6 ns rise time and 1.3 ns fall time, has been developed by optimal design of both the LED parameters and driving circuit. A 500 Mbit/s RZ pseudorandom pulse transmission experiment using the high-speed DH LED has been performed with a 5.7 dB level margin over a 2.7 km optical fibre. The 500 Mbit/s LED system feasibility has been confirmed.
Keywords
III-V semiconductors; digital communication systems; gallium arsenide; indium compounds; light emitting diodes; optical communication equipment; optical fibres; 1.3 micron wavelength; III-V semiconductors; InGaAsP/InP; LED parameters; digital communication systems; driving circuit; fall time; optical fibre; pseudorandom pulse transmission experiment; rise time; surface-emitting DH LEDs; system feasibility;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830655
Filename
4248195
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