Title :
500 Mbit/s transmission experiment using 1.3 /spl/ mu/m wavelength InGaAsP/InP high-speed surface-emitting DH LEDs
Author :
Suzuki, A. ; Nomura, Hideyuki ; Minemura, Kazuki
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
A 1.3 μm-wavelength high-speed surface-emitting DH LED, with 0.6 ns rise time and 1.3 ns fall time, has been developed by optimal design of both the LED parameters and driving circuit. A 500 Mbit/s RZ pseudorandom pulse transmission experiment using the high-speed DH LED has been performed with a 5.7 dB level margin over a 2.7 km optical fibre. The 500 Mbit/s LED system feasibility has been confirmed.
Keywords :
III-V semiconductors; digital communication systems; gallium arsenide; indium compounds; light emitting diodes; optical communication equipment; optical fibres; 1.3 micron wavelength; III-V semiconductors; InGaAsP/InP; LED parameters; digital communication systems; driving circuit; fall time; optical fibre; pseudorandom pulse transmission experiment; rise time; surface-emitting DH LEDs; system feasibility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830655
