Title :
High power GaInP/AlGaInP visible lasers (λ=646 nm) with narrow circular shaped far-field pattern
Author :
Maximov, M.V. ; Shernyakov, Yu.M. ; Novikov, I.I. ; Kuznetsov, S.M. ; Karachinsky, L.Ya. ; Gordeev, N.Yu. ; Kalosha, V.P. ; Shchukin, V.A. ; Ledentsov, N.N.
Author_Institution :
A.F. Ioffe Physico-Tech. Inst., Russian Acad. of Sci., St. Petersburg, Russia
fDate :
6/23/2005 12:00:00 AM
Abstract :
GaInP/AlGaInP visible lasers based on a longitudinal photonic bandgap crystal waveguide emitting at 646 nm show narrow circular shaped far field pattern. Vertical and lateral beam divergence of about 8° (full width at half maximum) that is independent of injection current is demonstrated. Differential quantum efficiency is up to 85%. Pulsed total optical output power is as high as 20 W for 100 μm-wide stripe lasers and 6 W for 20 μm-wide stripe lasers. Such values of output optical power are 2.5 higher with respect to ones obtained for the lasers fabricated from the state-of-the-art epiwafers for commercial 650 nm range DVD lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; photonic band gap; photonic crystals; semiconductor lasers; waveguide lasers; 100 micron; 20 W; 20 micron; 6 W; 646 nm; DVD lasers; FWHM; GaInP-AlGaInP; differential quantum efficiency; epiwafers; high power visible lasers; injection current; lateral beam divergence; longitudinal photonic bandgap crystal waveguide; narrow circular shaped far field pattern; pulsed total optical output power; stripe lasers; vertical beam divergence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051457
