Title :
High-speed GaAs SCFL monolithic integrated decision circuit for Gbit/s optical repeaters
Author :
Ohta, N. ; Takada, Tatsuo
Author_Institution :
NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan
Abstract :
A high-speed GaAs monolithic integrated decision circuit for Gbit/s optical repeaters, based on source coupled FET logic (SCFL) and designed to be completely ECL-compatible, has been developed. A clock phase margin of 150 degrees at 2 Gbit/s and IC yields of about 60% are achieved by using SCFL configuration. The developed IC operates stably from 10 to 60°C ambient temperature over a supply voltage fluctuation of more than 2 V.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated logic circuits; optical communication equipment; ECL-compatible; G bit/s operation; GaAs; III-V semiconductors; MESFET; SCFL; monolithic integrated decision circuit; optical communication equipment; optical repeaters; source coupled FET logic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830668
