Title :
0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm
Author :
Lindberg, H. ; Strassner, M. ; Gerster, E. ; Larsson, A.
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
5/13/2004 12:00:00 AM
Abstract :
An InP based optically pumped vertical external cavity surface emitting laser has been designed and optimised for emission at 1550 nm. To overcome thermal limitations an intra-cavity synthetic diamond heatspreader is bonded to the gain structure. The laser produces 780 mW at -30°C and 100 mW at 20°C in a near Gaussian beam (M2<1.2).
Keywords :
semiconductor lasers; surface emitting lasers; -30 degC; 0.8 W; 100 mW; 1550 nm; 20 degC; 780 mW; Gaussian beam; InP; diamond; gain structure; optically pumped vertical external cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040435
