• DocumentCode
    989675
  • Title

    0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm

  • Author

    Lindberg, H. ; Strassner, M. ; Gerster, E. ; Larsson, A.

  • Author_Institution
    Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg, Sweden
  • Volume
    40
  • Issue
    10
  • fYear
    2004
  • fDate
    5/13/2004 12:00:00 AM
  • Firstpage
    601
  • Lastpage
    602
  • Abstract
    An InP based optically pumped vertical external cavity surface emitting laser has been designed and optimised for emission at 1550 nm. To overcome thermal limitations an intra-cavity synthetic diamond heatspreader is bonded to the gain structure. The laser produces 780 mW at -30°C and 100 mW at 20°C in a near Gaussian beam (M2<1.2).
  • Keywords
    semiconductor lasers; surface emitting lasers; -30 degC; 0.8 W; 100 mW; 1550 nm; 20 degC; 780 mW; Gaussian beam; InP; diamond; gain structure; optically pumped vertical external cavity surface emitting laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040435
  • Filename
    1300229