Title :
Structure of GaAs-Ga1-xAlxAs superlattices grown by metal-organic chemical vapour deposition
Author :
Griffiths, R.J.M. ; Chew, N.G. ; Cullis, A.G. ; Joyce, G.C.
Author_Institution :
Royal Signals & Radar Establishment, Electronic Materials Division, Great Malvern, UK
Abstract :
A computer-controlled metal-organic chemical vapour deposition system employing a fast-switching gas manifold has been used to prepare GaAs-Ga1-xAlxAs superlattice structures. A combination of cross-sectional transmission electron microscopy and Auger and secondary ion mass spectrometry sputter profiling have allowed accurate measurements to be made of layer thickness and GaAs-Ga1-xAlxAs interface widths. Layers as thin as 15 Ã… have been observed and interface widths less than 20 Ã… measured.
Keywords :
Auger effect; CVD coatings; III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; interface structure; secondary ion mass spectroscopy; semiconductor growth; semiconductor superlattices; transmission electron microscope examination of materials; Auger effect; GaAs-Ga1-xAlxAs; III-V semiconductors; MOCVD; SIMS; TEM; chemical vapour deposition; computer-controlled system; cross-sectional transmission electron microscopy; fast-switching gas manifold; layer thickness; metalorganic CVD; secondary ion mass spectrometry sputter profiling; semiconductor growth; superlattices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830671
