• DocumentCode
    989729
  • Title

    Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon

  • Author

    Malhi, S.D.S. ; Shah, R.R. ; Shichijo, H. ; Pinizzotto, R.F. ; Chen, C.E. ; Chatterjee, P.K. ; Lam, H.W.

  • Author_Institution
    Texas Instruments Incorporated, Semiconductor Process & Design Center and Materials Science Laboratory, Dallas, USA
  • Volume
    19
  • Issue
    23
  • fYear
    1983
  • Firstpage
    993
  • Lastpage
    994
  • Abstract
    p-channel MOSFETs in LPCVD polysilicon have been built. Grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance. Dramatic enhancement of drive current and curtailment of leakage current have been observed. The devices are well suited for application as load elements in CMOS static RAMs.
  • Keywords
    chemical vapour deposition; field effect integrated circuits; insulated gate field effect transistors; integrated memory circuits; passivation; random-access storage; CMOS static RAM; H plasma; LPCVD; MOS IC; MOSFET; drive current enhancement; grain boundary passivation; leakage current-reduction; load elements; low-pressure chemical vapour deposition; p-channel device; polycrystalline Si;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830674
  • Filename
    4248219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989729