Title :
Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon
Author :
Malhi, S.D.S. ; Shah, R.R. ; Shichijo, H. ; Pinizzotto, R.F. ; Chen, C.E. ; Chatterjee, P.K. ; Lam, H.W.
Author_Institution :
Texas Instruments Incorporated, Semiconductor Process & Design Center and Materials Science Laboratory, Dallas, USA
Abstract :
p-channel MOSFETs in LPCVD polysilicon have been built. Grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance. Dramatic enhancement of drive current and curtailment of leakage current have been observed. The devices are well suited for application as load elements in CMOS static RAMs.
Keywords :
chemical vapour deposition; field effect integrated circuits; insulated gate field effect transistors; integrated memory circuits; passivation; random-access storage; CMOS static RAM; H plasma; LPCVD; MOS IC; MOSFET; drive current enhancement; grain boundary passivation; leakage current-reduction; load elements; low-pressure chemical vapour deposition; p-channel device; polycrystalline Si;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830674
