Title :
SiNx/sulphide passivated GaAs-AlGaAs microdisk lasers
Author :
Hobson, W.S. ; Mohideen, U. ; Pearton, S.J. ; Slusher, R.E. ; Ren, Fengyuan
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Semiconductor microdisk lasers serve as a sensitive probe of GaAs/AlGaAs microstructure surface passivation. A 40 nm thick encapsulating layer of SiNx over a sulphide passivated microdisk laser dramatically improved the laser lifetime. Annealing the microdisk laser at 400 degrees C for 300s resulted in a ten-fold increase in the laser output.
Keywords :
III-V semiconductors; aluminium compounds; annealing; encapsulation; gallium arsenide; optical workshop techniques; passivation; semiconductor lasers; GaAs; GaAs-AlGaAs; GaAs-AlGaAs microdisk lasers; SiN; SiN x encapsulating layer; annealing; laser lifetime; laser output; sulphide passivation; surface passivation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931477
