Title :
Optically-biased, edge-coupled InP/InGaAs heterojunction phototransistors
Author :
Wake, D. ; Newson, D.J. ; Henning, I.D.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
InP/GaAs heterojunction phototransistors are reported with high DC gain (greater than 270) and high unity-gain frequency (greater than 30GHz). To the authors´ knowledge, these are the highest performance heterojunction phototransistors reported to date. This performance is achieved by a combination of edge-coupled optical access and a two-terminal, optically-biased design. This design allows efficient, small area devices with low parasitics to be produced with a simple fabrication scheme.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; phototransistors; 30 GHz; InP-InGaAs; InP/InGaAs; edge-coupled optical access; fabrication scheme; heterojunction phototransistors; high DC gain; high unity-gain frequency; low parasitics; optically-biased design; small area devices; two-terminal;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931489
