179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plate

Author

Okamoto, Y. ; Ando, Y. ; Hataya, K. ; Nakayama, T. ; Miyamoto, H. ; Inoue, T. ; Senda, M. ; Hirata, K. ; Kosaki, M. ; Shibata, N. ; Kuzuhara, M.

Author_Institution

c/o Syst. Devices Res. Labs., NEC Corp., Otsu Shiga, Japan

Volume

40

Issue

10

fYear

2004

fDate

5/13/2004 12:00:00 AM

Firstpage

629

Lastpage

631

Abstract

Microwave high-power performance has been achieved using a recessed-gate AlGaN/GaN heterojunction FET with a field-modulating plate. Making use of recessed-gate structure, the device exhibited an improved transconductance of 200 mS/mm with a maximum drain current of 900 mA/mm and a gate-drain breakdown voltage of 200 V. A 48 mm wide single-chip FET exhibited 179 W (3.7 W/mm) output power, 64% power-added efficiency, and 9.3 dB linear gain at a drain bias of 46 V. The saturated output power of 179 W is believed to be the highest ever achieved for any single-chip FETs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; 179 W; 200 V; 9.3 dB; AlGaN-GaN; drain current; field modulating plate; gate-drain breakdown voltage; linear gain; microwave high power performance; output power; recessed gate AlGaN-GaN heterojunction FET; recessed gate structure; single chip FET; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20040421

Filename

1300306