Title :
Enhancement and depletion-mode AlGaAs-In0.15Ga0.85As HEMTs fabricated by selective ion implantation
Author :
Chan, Y.-J. ; Yang, Mau-Tsuen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
Enhancement- and depletion-mode AlGaAs/In0.15Ga0.85As HEMTs were fabricated on the same wafer by the selective ion implantation technique. This implantation results in extra carriers in the area of D-HEMTs, and therefore E- and D-HEMTs can be realised simultaneously after a single gate lithography step. As compared with the conventional approach, this selective ion implantation provides a convenient method for implementing E/D-mode logic circuits for high-speed and low-power applications.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; ion implantation; 1 mum; AlGaAs-In 0.15Ga 0.85As; AlGaAs-In 0.15Ga 0.85As HEMTs; D-HEMTs; DC I-V transfer characteristics; E-HEMTs; HEMT inverter; depletion-mode HEMTs; enhancement-mode HEMTs; gate length; high-speed applications; logic circuits; low-power applications; selective ion implantation; single gate lithography step;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931491
