Title :
High current density double modulation-doped Al0.48In0.52As-Ga0.35In0.65As millimetre-wave HEMT
Author :
Gueissaz, F. ; Enoki, Tsutomu ; Ishii, Y.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
0.2 mu m gate length InP-based HEMTs fabricated on double modulation-doped Al0.48In0.52As-Ga0.35In0.65As heterostructures are shown to yield unprecedented modulation characteristics in terms of high drain current density and high cutoff frequencies. At a record drain current density of 1350mA/mm, the specific transconductance and maximum current gain and unilateral power gain cutoff frequencies (fT and fmax) are as high as 1100mS/mm, 80GHz and 160GHz, respectively.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; two-dimensional electron gas; 0.2 mum; 160 GHz; 2DEG density; 80 GHz; Al 0.48In 0.52As-Ga 0.35In 0.65As; Al 0.48In 0.52As-Ga 0.35In 0.65As millimetre-wave HEMT; InP; InP-based HEMT; cutoff frequencies; double modulation-doped HEMT; drain saturation characteristics; gate length; high drain current density; maximum current gain cutoff frequency; modulation characteristics; planar doped layer; specific transconductance; unilateral power gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931492
