Title :
Novel vertical GaAs FET structure with submicrometre source-to-drain spacing
Author :
Kohn, Erhard ; Magarshack, J. ; Mishra, Umesh ; Eastman, L.F.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
As a feasibility study for sub 1/2 ¿m source-to-drain spaced FETs, a vertical 1/2 ¿ m GaAs FET structure has been fabricated incorporating a novel lossy insulator (MIS) gate contact. First device characteristics are presented.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; MIS contact; lossy insulator gate contact; submicron source to drain spacing; vertical GaAs FET structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830692
