DocumentCode
989940
Title
GaAs FET power amplifier module with high efficiency
Author
Chiba, K. ; Kanmuri, N.
Author_Institution
NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan
Volume
19
Issue
24
fYear
1983
Firstpage
1025
Lastpage
1026
Abstract
A high-efficiency GaAs FET power amplifier having a total efficiency of 70% and an output power of 2 W is realised in the 900 MHz band. A drain efficiency of 80% was achieved at a low operation voltage of 6 V. These high efficiencies were obtained by using the even-order harmonic tuning of an output matching circuit. Important parameters for achieving this efficiency are also clarified.
Keywords
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; power amplifiers; solid-state microwave circuits; 2 W output power; 900 MHz band; GaAs FET power amplifier module; drain efficiency; even-order harmonic tuning; high efficiency; microwave amplifier; output matching circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830694
Filename
4248245
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