Title :
A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements
Author :
Gerber, D.S. ; Maracas, G.N.
Author_Institution :
Center for Solid State Sci., Arizona State Univ., Tempe, AZ, USA
fDate :
10/1/1993 12:00:00 AM
Abstract :
A simple model is presented which takes into account interference effects in the common three-layer p-i-n diode epitaxial structure used for measurement of electroabsorption effects in multiple quantum well material. Antireflection coatings or surface roughening are not required to extinguish Fabry-Perot oscillations in the reflectance and transmittance spectra which improves the accuracy of the extracted absorption coefficient. Sources of error in the extracted absorption coefficient are examined. The absorption spectra of bulk GaAs and a 10-nm GaAs/10-nm AlGaAs multiple quantum well obtained using this method are compared with other measured results
Keywords :
aluminium compounds; antireflection coatings; electroabsorption; gallium arsenide; infrared spectra of inorganic solids; semiconductor device models; 10 mm; Fabry-Perot oscillations; GaAs-AlGaAs; GaAs/AlGaAs multiple quantum well; absorption spectra; antireflection coatings; bulk GaAs; electroabsorption effects; error; extracted absorption coefficient; interference effects; multiple quantum well absorption coefficient; multiple quantum well material; reflectance measurements; reflectance spectra; surface roughening; three-layer p-i-n diode epitaxial structure; transmittance measurements; transmittance spectra; Absorption; Coatings; Fabry-Perot; Gallium arsenide; Interference; P-i-n diodes; Reflectivity; Rough surfaces; Semiconductor process modeling; Surface roughness;
Journal_Title :
Quantum Electronics, IEEE Journal of
