A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements

Author

Gerber, D.S. ; Maracas, G.N.

Author_Institution

Center for Solid State Sci., Arizona State Univ., Tempe, AZ, USA

Volume

29

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

2589

Lastpage

2595

Abstract

A simple model is presented which takes into account interference effects in the common three-layer p-i-n diode epitaxial structure used for measurement of electroabsorption effects in multiple quantum well material. Antireflection coatings or surface roughening are not required to extinguish Fabry-Perot oscillations in the reflectance and transmittance spectra which improves the accuracy of the extracted absorption coefficient. Sources of error in the extracted absorption coefficient are examined. The absorption spectra of bulk GaAs and a 10-nm GaAs/10-nm AlGaAs multiple quantum well obtained using this method are compared with other measured results

Keywords

aluminium compounds; antireflection coatings; electroabsorption; gallium arsenide; infrared spectra of inorganic solids; semiconductor device models; 10 mm; Fabry-Perot oscillations; GaAs-AlGaAs; GaAs/AlGaAs multiple quantum well; absorption spectra; antireflection coatings; bulk GaAs; electroabsorption effects; error; extracted absorption coefficient; interference effects; multiple quantum well absorption coefficient; multiple quantum well material; reflectance measurements; reflectance spectra; surface roughening; three-layer p-i-n diode epitaxial structure; transmittance measurements; transmittance spectra; Absorption; Coatings; Fabry-Perot; Gallium arsenide; Interference; P-i-n diodes; Reflectivity; Rough surfaces; Semiconductor process modeling; Surface roughness;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.250380

Filename

250380