Title :
In0.53Ga0.47As liquid phase epitaxy on (100)-InP substrates at low growth temperatures
Author :
Eisele, H. ; K¿¿rber, W. ; Benz, K.W.
Author_Institution :
Universitÿt Stuttgart, Physikalisches Institut, Kristallabor, Stuttgart, West Germany
Abstract :
In0.53Ga0.47As epitaxial layers of high quality and excellent surface morphology have been grown in an automated LPE system. The growth temperature was varied between 500 and 63O°C. Room-temperature Hall measurements indicated a net carrier concentration of n = 8 × 1014 cm¿3 and mobility values of ¿ = 13000 cm2V¿1 s¿1 at TG 617°C and n = 7.7 × 1015 cm¿3 and ¿ = 9800 cm2 V¿1 s¿1 at TG = 517°C, respectively.
Keywords :
Hall effect; III-V semiconductors; carrier density; carrier mobility; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; Hall measurements; In0.53Ga0.47As; InP substrates; automated LPE system; carrier concentration; epitaxial layers; liquid phase epitaxy; low growth temperatures; mobility; semiconductor growth; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830702
