Title :
Alloy composition and flow rates in GaxIn1-xAsyP1-y lattice-matched to InP grown by MO-CVD
Author :
Sugou, S. ; Kameyama, A. ; Katsuda, H. ; Miyamoto, Yutaka ; Furuya, Keiichi ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
Relations between alloy compositions and flow rates of sources in TEG/TEI/AsH3/PH3/H2 LP-MOCVD system for the growth of GaInAsP/InP were experimentally studied under lattice-matching and high crystalline quality enough for laser oscillation. A proportional relationship was observed between the alloy of Ga/In and source of TEG/TEI, As/P and AsH3/PH3 over the bandgap wavelength of 1.3-1.6 μm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 to 1.6 microns wavelength; GaInAsP/InP; GaxIn1-xAsyP1-y; InP; VPE; alloy compositions; bandgap wavelength; epitaxial growth; flow rates; laser oscillation; lattice-matching; low pressure MOCVD; semiconductor growth; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830703
