DocumentCode
990015
Title
Alloy composition and flow rates in GaxIn1-xAsyP1-y lattice-matched to InP grown by MO-CVD
Author
Sugou, S. ; Kameyama, A. ; Katsuda, H. ; Miyamoto, Yutaka ; Furuya, Keiichi ; Suematsu, Yasuharu
Author_Institution
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Volume
19
Issue
24
fYear
1983
Firstpage
1036
Lastpage
1037
Abstract
Relations between alloy compositions and flow rates of sources in TEG/TEI/AsH3/PH3/H2 LP-MOCVD system for the growth of GaInAsP/InP were experimentally studied under lattice-matching and high crystalline quality enough for laser oscillation. A proportional relationship was observed between the alloy of Ga/In and source of TEG/TEI, As/P and AsH3/PH3 over the bandgap wavelength of 1.3-1.6 μm.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 to 1.6 microns wavelength; GaInAsP/InP; GaxIn1-xAsyP1-y; InP; VPE; alloy compositions; bandgap wavelength; epitaxial growth; flow rates; laser oscillation; lattice-matching; low pressure MOCVD; semiconductor growth; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830703
Filename
4248253
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