• DocumentCode
    990097
  • Title

    Anisotropic undercutting in (100) indium phosphide

  • Author

    Hemenway, B.R. ; Bowers, John E. ; Miller, B.I.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    19
  • Issue
    24
  • fYear
    1983
  • Firstpage
    1049
  • Lastpage
    1051
  • Abstract
    We present the undercutting rate of an indium phosphide crystal as a function of angle within the (100) plane. We use concentrated HC1 as the etchant and epitaxial InGaAsP as an etch mask. Undercutting behaviour including wall profile is determined as a function of etch time. The resulting description can be used to design crystallographic structures with a variety of orientations.
  • Keywords
    III-V semiconductors; etching; indium compounds; (100) plane; anisotropic undercutting; concentrated HCl etchant; epitaxial InGaAsP; etch mask; semiconductor; wall profile;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830712
  • Filename
    4248266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990097