Title :
Anisotropic undercutting in (100) indium phosphide
Author :
Hemenway, B.R. ; Bowers, John E. ; Miller, B.I.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
We present the undercutting rate of an indium phosphide crystal as a function of angle within the (100) plane. We use concentrated HC1 as the etchant and epitaxial InGaAsP as an etch mask. Undercutting behaviour including wall profile is determined as a function of etch time. The resulting description can be used to design crystallographic structures with a variety of orientations.
Keywords :
III-V semiconductors; etching; indium compounds; (100) plane; anisotropic undercutting; concentrated HCl etchant; epitaxial InGaAsP; etch mask; semiconductor; wall profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830712
