• DocumentCode
    990120
  • Title

    Hydrogenation of electron traps in bulk GaAs and GaP

  • Author

    Pearton, S.J. ; Haller, Eugene E. ; Elliott, A.G.

  • Author_Institution
    University of California, Lawrence Berkeley Laboratory, Berkeley, USA
  • Volume
    19
  • Issue
    24
  • fYear
    1983
  • Firstpage
    1052
  • Lastpage
    1053
  • Abstract
    The effect of hydrogenation on a variety of electrically active defects in bulk single-crystal GaAs and GaP has been observed using transient capacitance spectroscopy. Approximately half the different defect states in these materials were neutralised by hydrogen incorporation. The efficiency of neutralisation was slightly more pronounced for defects in GaAs compared to those in GaP.
  • Keywords
    III-V semiconductors; electron traps; gallium arsenide; gallium compounds; GaAs; GaP; effect of hydrogenation; electrically active defects; electron traps; semiconductor; transient capacitance spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830714
  • Filename
    4248268
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990120