Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs

Author

Dey, Aritra ; Chakravorty, Anjan ; DasGupta, Nandita ; DasGupta, Amitava

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai

Volume

55

Issue

12

fYear

2008

Firstpage

3442

Lastpage

3449

Abstract

In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate material work function, and gate voltage. A model for the subthreshold behavior of three-terminal DG MOSFETs is also presented. The results of the models show excellent match with simulations using MEDICI. The analytical models provide physical insight which is helpful for device design.

Keywords

MOSFET; semiconductor device models; MEDICI; asymmetric 3T double-gate MOSFET; asymmetric 4T double-gate MOSFET; gate material work function; gate oxide thickness; gate voltage; subthreshold current; subthreshold slope; Analytical models; CMOS technology; Insulation; MOSFETs; Medical simulation; Poisson equations; Predictive models; Silicon on insulator technology; Subthreshold current; Threshold voltage; Analytical model; double gate (DG); drain-induced barrier lowering (DIBL); silicon-on-insulator (SOI); subthreshold current; subthreshold slope;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2006109

Filename

4674769