Title :
A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology
Author :
Huang, Wei-Kuo ; Liu, Yu-Chang ; Hsin, Yue-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhong-Li
Abstract :
This work investigates a new silicon (Si) photodiode (PD) by standard complementary metal-oxide-semiconductor (CMOS) process. The basic structure of the proposed Si PD is formed by multiple p-n diodes with shallow trench isolation oxide in between p- and n-region from Taiwan Semiconductor Manufacturing Company 0.18-mum CMOS technology. The proposed PD demonstrates a responsivity of 0.37 A/W at zero bias (lambda=823nm). At reverse bias (VR) of 14.3 V, the fabricated PD exhibits a high responsivity of 0.74 A/W, a -3-dB electrical bandwidth of 1.6 GHz, and an eye diagram at 3.5 Gb/s
Keywords :
CMOS integrated circuits; high-speed optical techniques; integrated optics; integrated optoelectronics; optical communication equipment; optical fibre communication; p-n junctions; photodiodes; silicon; 1.6 GHz; 14.3 V; 3.5 Gbit/s; 823 nm; Si; eye diagram; high-responsivity photodiode; high-speed photodiode; long-haul optical communication; multiple p-n diodes; silicon photodiode; standard CMOS technology; trench isolation oxide; CMOS process; CMOS technology; Isolation technology; MOSFET circuits; Optical fiber communication; Photodetectors; Photodiodes; Semiconductor diodes; Silicon; Substrates; Complementary metal–oxide–semiconductor (CMOS); photodiode (PD); silicon (Si);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.890055
