Title :
New diffraction grating profiles in InP for DFB lasers and integrated optics
Author :
Westbrook, L.D. ; Nelson, A.W. ; Fiddyment, P.J.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
A bilevel processing technique has been used to obtain sub-micrometer-period InP diffraction gratings. Novel cross-sectional grating profiles with depths of up to 4000 Ã… have been obtained which should facilitate the fabrication of more efficient Bragg devices.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; indium compounds; integrated optics; optical workshop techniques; semiconductor junction lasers; Bragg devices; DBR laser; DFB lasers; InP; bilevel processing technique; diffraction grating profiles; distributed Bragg reflector laser; distributed feedback laser; integrated optics; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830730
