• DocumentCode
    990263
  • Title

    Highly Stable 1.3- \\mu\\hbox {m} -Wavelength Lasers With p- and n-InP Buried Heterostructure

  • Author

    Takeshita, Tatsuya ; Ito, Tsuyoshi ; Sugo, Mitsuru ; Kato, Kazutoshi

  • Author_Institution
    Nippon Telegraph & Telephone (NTT) Photonics Labs., NTT Corp., Atsugi
  • Volume
    8
  • Issue
    3
  • fYear
    2008
  • Firstpage
    576
  • Lastpage
    581
  • Abstract
    Highly stable 1.3-mum-wavelength Fabry-Perot lasers with a p- and n-type InP buried heterostructure have been achieved at an ambient temperature of 85 degC. The t 0.5 deterioration (second-stage degradation) property does not appear clearly within 6000 h, and the saturated first-stage degradation property remains. It is confirmed that the fabricated 1.3-mum FP lasers have a different optical-beam-induced-current characteristic from lasers suffering from t 0.5 deterioration. The first-stage degradation is due to the deterioration of the active layer and is attributed to the fact that some nonradiative recombination centers are generated in the active layer.
  • Keywords
    III-V semiconductors; indium compounds; semiconductor lasers; Fabry-Perot lasers; InP; active layer deterioration; buried heterostructure; first stage degradation; highly stable lasers; nonradiative recombination center; temperature 85 C; wavelength 1.3 mum; Degradation; Distributed feedback devices; Fiber lasers; Laser modes; Optical saturation; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers; Aging; failure analysis; indium compounds; laser reliability; photon beams; quantum-well lasers; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2008.2000894
  • Filename
    4675188