Title :
New technique for semiconductor device modelling
Author :
Goswami, P.K. ; Sitch, J.E.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
A transient model has been developed for use with microwave semiconductor devices. Charge transport is by particles moving under the influence of the electric field in a self consistent time-stepping procedure. The motion of each particle is governed by its momentum and energy using the relaxation time approximation.
Keywords :
semiconductor device models; solid-state microwave devices; charge transport; energy transport; microwave devices; momentum transport; relaxation time approximation; self consistent time-stepping procedure; semiconductor device modelling; transient model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830737
