• DocumentCode
    990355
  • Title

    Assessment of millimetre-wave Si IMPATT material

  • Author

    Hing, L.A. ; Curran, J.E.

  • Author_Institution
    GEC Research Laboratories, Hirst Research Centre, Wembley, UK
  • Volume
    19
  • Issue
    25
  • fYear
    1983
  • Firstpage
    1091
  • Lastpage
    1092
  • Abstract
    Millimetre-wave Si double-drift IMPATTs require high doping levels. Under these circumstances it will be shown that the determination of the doping profile from C/V or VB measurements leads to erroneous results and that SRP profiling is the preferred method.
  • Keywords
    IMPATT diodes; doping profiles; elemental semiconductors; silicon; MM wave IMPATT; SRP profiling; Si double drift IMPATT; doping profile;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830740
  • Filename
    4248302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990355