Title :
Assessment of millimetre-wave Si IMPATT material
Author :
Hing, L.A. ; Curran, J.E.
Author_Institution :
GEC Research Laboratories, Hirst Research Centre, Wembley, UK
Abstract :
Millimetre-wave Si double-drift IMPATTs require high doping levels. Under these circumstances it will be shown that the determination of the doping profile from C/V or VB measurements leads to erroneous results and that SRP profiling is the preferred method.
Keywords :
IMPATT diodes; doping profiles; elemental semiconductors; silicon; MM wave IMPATT; SRP profiling; Si double drift IMPATT; doping profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830740
