Subscriber line interface circuit LSI fabricated using high-voltage CMOS/SIMOX technology

High-voltage buried-channel CMOS/SIMOX technology which is characterised with the existence of an electric-field-shielding layer formed by oxygen implanatation was applied to fabricate a BSH-LSI for a subscriber line interface circuit, providing three functions of battery feed, supervision and hybrid. In this CMOS BSH-LSI, a high breakdown voltage of higher than 60 V and a low breakdown voltage of 15 V were fabricated by the same process. This BSH-LSI showed a high level of performance during operation. The chip size and dissipation power of the BSH-LSI were reduced to approximately one-third and one-half, respectively, compared with a conventional BSH-LSI fabricated with bipolar technology.