Subscriber line interface circuit LSI fabricated using high-voltage CMOS/SIMOX technology

Author

Nakashima, S. ; Maeda, Yuji

Author_Institution

NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan

Volume

19

Issue

25

fYear

1983

Firstpage

1095

Lastpage

1097

Abstract

High-voltage buried-channel CMOS/SIMOX technology which is characterised with the existence of an electric-field-shielding layer formed by oxygen implanatation was applied to fabricate a BSH-LSI for a subscriber line interface circuit, providing three functions of battery feed, supervision and hybrid. In this CMOS BSH-LSI, a high breakdown voltage of higher than 60 V and a low breakdown voltage of 15 V were fabricated by the same process. This BSH-LSI showed a high level of performance during operation. The chip size and dissipation power of the BSH-LSI were reduced to approximately one-third and one-half, respectively, compared with a conventional BSH-LSI fabricated with bipolar technology.

Keywords

digital communication systems; digital integrated circuits; electronic switching systems; field effect integrated circuits; integrated circuit technology; large scale integration; telephone switching equipment; BSH-LSI; O2 implantation; SLIC; battery feed; breakdown voltage; buried-channel; dissipation power; electric-field-shielding layer; high-voltage CMOS/SIMOX technology; hybrid; separation by implanted O2; subscriber line interface circuit; supervision;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19830743

Filename

4248305