Title :
Q-switching cleaved-coupled-cavity laser with an integrated intracavity modulator
Author :
Lee, T.P. ; Burrus, C.A. ; Sessa, W.B. ; Besomi, P.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
We describe fabrication and performance of a Q-switching cleaved-coupled-cavity laser with an integrated intracavity modulator. The pulse repetition frequency of this 3-section device was tunable between 320 and 450 MHz with an external microwave injected signal, the modulation depth of the pulsations was 80¿100% with a nearly single-longitudinal-mode output spectrum, and the Q-switched light pulses were modulated by a pseudorandom PCM signal at 322 Mbit/s.
Keywords :
III-V semiconductors; Q-switching; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; optical modulation; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP laser; Q-switching cleaved-coupled-cavity laser; external microwave injected signal; integrated intracavity modulator; modulation depth; pseudorandom PCM signal; pulse repetition frequency; single-longitudinal-mode output spectrum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840001
