Title :
Am quantum noise in 1.3 μm InGaAsP lasers
Author :
Mukai, T. ; Yamamoto, Y.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Intensity fluctuations for two types of 1.3 μm InGaAsP laser are measured and calculated based on device structural and material parameters and are found to be in good agreement with the quantum-noise-limited level.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 micron wavelength; AM quantum noise; III-V semiconductors; InGaAsP laser; material parameters; structural parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840021
