• DocumentCode
    990658
  • Title

    New model for submicron-scale dual-gate TFT

  • Author

    Baudrand, H. ; Ahmed, A. Abdelbaky

  • Author_Institution
    ENSEEIHT, Laboratoire de Microondes, Toulouse, France
  • Volume
    20
  • Issue
    1
  • fYear
    1984
  • Firstpage
    33
  • Lastpage
    35
  • Abstract
    A new model is proposed to represent the submicron-scale dual-gate thin-film transistor (DGTFT) as the association of three single-gate TFTs. The finite-difference method is applied to verify the conditions for which the model is valid, and using a new variant of this technique the quasistatic solution is obtained in an inhomogeneous medium.
  • Keywords
    semiconductor device models; thin film transistors; FET; dual-gate device; finite-difference method; inhomogeneous medium; quasistatic solution; semiconductor device models; submicron-scale; thin-film transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840024
  • Filename
    4248579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990658