Title :
New model for submicron-scale dual-gate TFT
Author :
Baudrand, H. ; Ahmed, A. Abdelbaky
Author_Institution :
ENSEEIHT, Laboratoire de Microondes, Toulouse, France
Abstract :
A new model is proposed to represent the submicron-scale dual-gate thin-film transistor (DGTFT) as the association of three single-gate TFTs. The finite-difference method is applied to verify the conditions for which the model is valid, and using a new variant of this technique the quasistatic solution is obtained in an inhomogeneous medium.
Keywords :
semiconductor device models; thin film transistors; FET; dual-gate device; finite-difference method; inhomogeneous medium; quasistatic solution; semiconductor device models; submicron-scale; thin-film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840024
