Title :
1.55-μm DFB lasers utilizing an automatically buried absorptive InAsP layer having a high single-mode yield
Author :
Park, S.W. ; Moon, C.K. ; Han, J.C. ; Song, J.-I.
Author_Institution :
Dept. of Inf. & Commun., Kwang-Ju Inst. of Sciene & Technol., Gwangju, South Korea
fDate :
6/1/2004 12:00:00 AM
Abstract :
We describe 1.55-μm distributed feedback laser diodes (DFB LDs) having a single-mode (SM) yield as high as 80% and 93% for as-cleaved and antireflection/high reflection (AR/HR=3%/95%) coated devices, respectively. The high SM yield was achieved by introducing an automatically buried InAsP layer between a concave of InP corrugations and an overgrown layer. The use of the automatically buried InAsP layer implemented by a single step growth makes the device fabrication process much easier than that of conventional loss-coupled DFB LDs. Fabricated DFB LDs with AR/HR-coated facets showed a low threshold current of 8 mA (34 mA) and a high slope efficiency of 0.32 mW/mA (0.22 mW/mA) at 25/spl deg/C (85/spl deg/C). A sidemode suppression ratio better than 40 dB was obtained for the temperature range between -20/spl deg/C and 85/spl deg/C and the injection current range between 20 and 100 mA.
Keywords :
III-V semiconductors; antireflection coatings; diffraction gratings; distributed feedback lasers; indium compounds; laser beams; laser modes; optical fabrication; semiconductor growth; semiconductor lasers; -20 to 85 degC; 1.55 mum; 20 to 100 mA; 25 degC; 8 mA; DFB lasers; InAsP; InP corrugations; absorptive InAsP layer; antireflection/high reflection coated device; automatically buried InAsP layer; device fabrication; distributed feedback laser diodes; side mode suppression ratio; single-mode yield; Chemical lasers; Distributed feedback devices; Fabrication; Gas lasers; Gratings; Indium phosphide; Laser feedback; Moon; Optical reflection; Samarium;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.826777
