Title :
CW technique for measurement of linewidth enhancement factor: application to 735-nm tensile-strained GaAsP quantum-well lasers
Author :
Rodríguez, D. ; Borruel, L. ; Esquivias, I. ; Wenzel, H. ; Sumpf, B. ; Erbert, G.
Author_Institution :
Dept. de Tecnologia Fotonica, Univ. Politecnica de Madrid, Spain
fDate :
6/1/2004 12:00:00 AM
Abstract :
We present a procedure for determining the linewidth enhancement factor (α parameter) in semiconductor lasers under continuous-wave (CW) operation. It is based on the measurement of the amplified spontaneous emission spectra, with a proper correction of thermal effects. The method is applied to 735-nm tensile strained GaAsP-AlGaAs quantum-well lasers and it is validated by comparing CW results, after correcting thermal effects, with pulsed measurements. The results show a low value of the α parameter attributed to the tensile strain.
Keywords :
III-V semiconductors; gallium compounds; laser variables measurement; quantum well lasers; spectral line breadth; superradiance; 735 nm; GaAsP-AlGaAs; amplified spontaneous emission spectra; continuous-wave operation; linewidth enhancement factor; pulsed measurements; quantum-well lasers; semiconductor lasers; tensile-strained lasers; thermal effects; Charge carrier density; Measurement techniques; Pulse amplifiers; Pulse measurements; Pump lasers; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Temperature; Thermal resistance;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.826761
