Title :
Longitudinal static-field model for DH lasers
Author :
Baets, Roel ; Lagasse, P.E.
Author_Institution :
University of Gent, Laboratory for Electromagnetism & Acoustics, Gent, Belgium
Abstract :
A new static model for double-heterostructure lasers is presented which can take into account longitudinal effects in the cavity. The model makes use of the beam-propagation method to calculate the field propagation through the lasing waveguide structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser theory; semiconductor device models; semiconductor junction lasers; GaAs-GaAlAs DH laser; III-V semiconductors; beam-propagation method; cavity; double-heterostructure lasers; field propagation; laser theory; lasing waveguide structure; longitudinal effects; semiconductor junction lasers; static-field model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840029
