Title :
Photoexcited In0.53Ga0.47As/Inp quantum-well lasers with high characteristic temperatures
Author :
Kodama, Kazuya ; Komeno, J. ; Ozeki, Motoyuki
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
We report the temperature dependence of the threshold excitation power of photopumped In0.53Ga0.47As/Inp quantum-well structures. We have observed that the quantum-well active layer results in an increase of the characteristic temperature T0.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; III-V semiconductors; In0.53Ga0.47As/InP; active layer; characteristic temperature increase; p-n heterojunctions; photoexcitation; quantum-well structures; semiconductor junction lasers; temperature dependence; threshold excitation power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840030
