Title :
Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers
Author :
Chang, S.J. ; Wu, L.W. ; Su, Y.K. ; Hsu, Y.P. ; Lai, W.C. ; Tsai, J.M. ; Sheu, J.K. ; Lee, C.T.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/2004 12:00:00 AM
Abstract :
GaN-based light-emitting diodes (LEDs) with various p-cap layers were prepared. It was found that surface morphologies of the LEDs with 800°C grown cap layers were rough due to the low lateral growth rate of GaN. It was also found that 20-mA forward voltage of the LED with 800°C grown p-AlInGaN-GaN double-cap layer was only 3.05 V. Furthermore, it was found that we could achieve a high output power and a long lifetime by using the 800°C grown p-AlInGaN-GaN double-cap layer.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; surface morphology; 20 mA; 3.05 V; 800 degC; AlInGaN-GaN; double-cap layers; light-emitting diodes; multiquantum well; nitride-based LED; p-cap layers; Gallium nitride; Light emitting diodes; Microelectronics; Quantum well devices; Refractive index; Rough surfaces; Surface morphology; Surface roughness; Temperature; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.826737
