Title :
Arsenic passivation: a possible remedy for MBE growth-interruption problems
Author :
Kawai, N.J. ; Nakagawa, T. ; Kojima, T. ; Ohta, K. ; Kawashima, M.
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
Amorphous arsenic passivation was used to suppress the interfacial carrier depletion at an MBE growth-interrupted interface. The protection of the surface against room air, heat-treatment (180°C) in room air, and deionised water is confirmed.
Keywords :
amorphous semiconductors; arsenic; molecular beam epitaxial growth; passivation; semiconductor growth; 180°C; MBE; amorphous As; deionised water; growth-interruption problems; heat-treatment; interfacial carrier depletion suppression; molecular beam epitaxy; passivation; room air; semiconductor growth; surface protection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840033
