• DocumentCode
    990753
  • Title

    Arsenic passivation: a possible remedy for MBE growth-interruption problems

  • Author

    Kawai, N.J. ; Nakagawa, T. ; Kojima, T. ; Ohta, K. ; Kawashima, M.

  • Author_Institution
    Electrotechnical Laboratory, Tsukuba, Japan
  • Volume
    20
  • Issue
    1
  • fYear
    1984
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    Amorphous arsenic passivation was used to suppress the interfacial carrier depletion at an MBE growth-interrupted interface. The protection of the surface against room air, heat-treatment (180°C) in room air, and deionised water is confirmed.
  • Keywords
    amorphous semiconductors; arsenic; molecular beam epitaxial growth; passivation; semiconductor growth; 180°C; MBE; amorphous As; deionised water; growth-interruption problems; heat-treatment; interfacial carrier depletion suppression; molecular beam epitaxy; passivation; room air; semiconductor growth; surface protection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840033
  • Filename
    4248590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=990753