Title :
Optically pumped In0.53Ga0.47As/InP MQW lasers grown by chloride vapour-phase epitaxy
Author :
Kodama, Kazuya ; Ozeki, Motoyuki ; Komeno, J.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
The lasing characteristics of optically pumped In0.53Ga0.47As/InP MQW structures grown by chloride vapour-phase epitaxy were investigated. A detailed examination of the stimulated emission spectra shows that the MQW structures have good heterointerface properties.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; optical pumping; p-n heterojunctions; semiconductor junction lasers; vapour phase epitaxial growth; In0.53Ga0.47As/InP; VPE; chloride vapour-phase epitaxy; heterointerface properties; lasing characteristics; optical pumping; semiconductor lasers; stimulated emission spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840034
