• DocumentCode
    990769
  • Title

    An Analytical Model for the Ordered Nanopore Array Diode Laser

  • Author

    Verma, Varun Boehm ; Elarde, Victor G. ; Coleman, James J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL
  • Volume
    45
  • Issue
    1
  • fYear
    2009
  • Firstpage
    10
  • Lastpage
    20
  • Abstract
    In this work, we present an analytical model describing the density of states and spectral behavior of the ordered nanopore array diode laser. The nanopore structure consists of an ordinary quantum well perturbed by a periodic lattice of energy barriers. It is shown that such a perturbation leads to the formation of energy subbands in both the conduction and valence bands. The theoretically predicted gain spectrum shows excellent agreement with experimental results. Finally, the unique effects of in-plane quantization and periodicity on the intersubband selection rules are described in detail.
  • Keywords
    III-V semiconductors; conduction bands; electronic density of states; gallium arsenide; indium compounds; nanoporous materials; perturbation theory; quantum well lasers; valence bands; In0.25Ga0.75As-GaAs; conduction band; density of states; energy barriers; energy subband formation; in-plane quantization; intersubband selection rules; nanopore structure; ordered nanopore array diode laser; ordinary quantum well; periodicity; perturbation; quantum-well lasers; semiconductor lasers; valence band; Analytical models; Diode lasers; Lattices; Nanoporous materials; Optical arrays; Periodic structures; Photonic crystals; Quantum dot lasers; Quantum well lasers; Semiconductor laser arrays; Quantum dots; quantum-well lasers; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2008.2004749
  • Filename
    4675292