Title :
Threshold current characteristics of GaAs lasers under short pulse excitation
Author :
Olsson, N.A. ; Dutta, N.K. ; Tsang, W.T. ; Logan, R.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Measurements of the temperature dependence of threshold current using both short pulse and CW excitation of GaAs heterostructure lasers with multiquantum well and conventional active layers are presented. Our results show that the carrier density at threshold is weakly temperature-dependent in both types of lasers. This is consistent with the measured carrier lifetime at threshold.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; semiconductor junction lasers; CW excitation; GaAs heterostructure lasers; III-V semiconductors; active layers; carrier density; carrier lifetime; multiquantum well; semiconductor junction lasers; short pulse excitation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840044
