• DocumentCode
    991057
  • Title

    Evidence of the importance of Auger recombination for InGaAsP lasers

  • Author

    Haug, A.

  • Author_Institution
    Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
  • Volume
    20
  • Issue
    2
  • fYear
    1984
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    The temperature dependence of Auger recombination in InGaAsP can be described by two regions, one with a slow increase of the Auger coefficient and one with a strong increase. This behaviour is similar to that of the threshold current of an InGaAsP laser. In particular, the slope of the temperature curve of the Auger coefficient changes at T = 255 K, which is exactly the break point temperature of the threshold current. Auger recombination therefore seems to be the most important cause for the temperature dependence of the threshold current in InGaAsP lasers.
  • Keywords
    Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; 255K; Auger recombination; III-V semiconductors; InGaAsP lasers; break point temperature; semiconductor lasers; temperature dependence; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840059
  • Filename
    4248622