DocumentCode
991057
Title
Evidence of the importance of Auger recombination for InGaAsP lasers
Author
Haug, A.
Author_Institution
Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
Volume
20
Issue
2
fYear
1984
Firstpage
85
Lastpage
86
Abstract
The temperature dependence of Auger recombination in InGaAsP can be described by two regions, one with a slow increase of the Auger coefficient and one with a strong increase. This behaviour is similar to that of the threshold current of an InGaAsP laser. In particular, the slope of the temperature curve of the Auger coefficient changes at T = 255 K, which is exactly the break point temperature of the threshold current. Auger recombination therefore seems to be the most important cause for the temperature dependence of the threshold current in InGaAsP lasers.
Keywords
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; 255K; Auger recombination; III-V semiconductors; InGaAsP lasers; break point temperature; semiconductor lasers; temperature dependence; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840059
Filename
4248622
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