Title :
Evidence of the importance of Auger recombination for InGaAsP lasers
Author_Institution :
Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
Abstract :
The temperature dependence of Auger recombination in InGaAsP can be described by two regions, one with a slow increase of the Auger coefficient and one with a strong increase. This behaviour is similar to that of the threshold current of an InGaAsP laser. In particular, the slope of the temperature curve of the Auger coefficient changes at T = 255 K, which is exactly the break point temperature of the threshold current. Auger recombination therefore seems to be the most important cause for the temperature dependence of the threshold current in InGaAsP lasers.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; 255K; Auger recombination; III-V semiconductors; InGaAsP lasers; break point temperature; semiconductor lasers; temperature dependence; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840059