Title :
Twisted-terraced-substrate GaAs/AlGaAs lasers
Author :
Chen, Kun-Long ; Sugino, Takushi ; Wang, Shuhui
Author_Institution :
University of California, Department of Electrical Engineering & Computer Sciences and Electronic Research Laboratory, Berkeley, USA
Abstract :
We present a new structure of AlGaAs/GaAs DH lasers consisting of two oppositely facing terraced-substrate cavities in series. Polarisation change at the junction results in internal reflection and produces a mode-selection effect. A stable single longitudinal mode is observed over a wide current range from 100 to 150 mA. The dominant lasing mode is locked over a 7° temperature variation. The lowest observed threshold current is 50 mA.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; laser modes; p-n heterojunctions; semiconductor junction lasers; AlGaAS/GaAs DH lasers; III-V semiconductors; double heterostructure; internal reflection; mode locking; mode-selection effect; polarisation change; semiconductor lasers; stable single longitudinal mode; terraced-substrate cavities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840064
