• DocumentCode
    991110
  • Title

    Twisted-terraced-substrate GaAs/AlGaAs lasers

  • Author

    Chen, Kun-Long ; Sugino, Takushi ; Wang, Shuhui

  • Author_Institution
    University of California, Department of Electrical Engineering & Computer Sciences and Electronic Research Laboratory, Berkeley, USA
  • Volume
    20
  • Issue
    2
  • fYear
    1984
  • Firstpage
    91
  • Lastpage
    93
  • Abstract
    We present a new structure of AlGaAs/GaAs DH lasers consisting of two oppositely facing terraced-substrate cavities in series. Polarisation change at the junction results in internal reflection and produces a mode-selection effect. A stable single longitudinal mode is observed over a wide current range from 100 to 150 mA. The dominant lasing mode is locked over a 7° temperature variation. The lowest observed threshold current is 50 mA.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; laser modes; p-n heterojunctions; semiconductor junction lasers; AlGaAS/GaAs DH lasers; III-V semiconductors; double heterostructure; internal reflection; mode locking; mode-selection effect; polarisation change; semiconductor lasers; stable single longitudinal mode; terraced-substrate cavities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840064
  • Filename
    4248628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=991110