Title :
Modelling of single- and dual-gate MESFET mixers
Author :
Meierer, R. ; Tsironis, Christos
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
Computer modelling allowing the determination of matching circuitry and optimum bias conditions for maximum conversion gain and IF bandwidth of FET mixers is described. Theoretical results for single-gate and dual-gate FET mixers are presented. Good agreement with measurements on a 12 GHz DBS reception dual-gate FET mixer (8 dB conversion gain with 800 MHz bandwidth) is demonstrated.
Keywords :
Schottky gate field effect transistors; circuit CAD; mixers (circuits); semiconductor device models; solid-state microwave circuits; 12 GHz; CAD; DBS reception; IF bandwidth; MESFET; SHF; X-band; computer-aided design; direct broadcast satellite; dual-gate FET mixer; matching circuitry; maximum conversion gain; modelling; optimum bias conditions; single gate device; solid-state microwave circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840068
