Title :
GaAs MESFETs with a buried p-layer for large-scale integration
Author :
Umemoto, Yuya ; Takahashi, Satoshi ; Matsunaga, Nobutomo ; Nakamura, Mitsutoshi
Author_Institution :
Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
Abstract :
A new GaAs MESFET structure with a buried p-layer that produces a uniform threshold voltage is proposed and realised using a Be ion implantation technique. These new FETs improve the uniformity of the threshold voltage to 5% from the previous 10% in HB Cr-doped GaAs crystal.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; ion implantation; large scale integration; semiconductor doping; Be ion implantation; GaAs MESFET; IC technology; III-V semiconductor; LSI; buried p-layer; large-scale integration; semiconductor doping; uniform threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840069
