• DocumentCode
    991148
  • Title

    GaAs MESFETs with a buried p-layer for large-scale integration

  • Author

    Umemoto, Yuya ; Takahashi, Satoshi ; Matsunaga, Nobutomo ; Nakamura, Mitsutoshi

  • Author_Institution
    Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
  • Volume
    20
  • Issue
    2
  • fYear
    1984
  • Firstpage
    98
  • Abstract
    A new GaAs MESFET structure with a buried p-layer that produces a uniform threshold voltage is proposed and realised using a Be ion implantation technique. These new FETs improve the uniformity of the threshold voltage to 5% from the previous 10% in HB Cr-doped GaAs crystal.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; ion implantation; large scale integration; semiconductor doping; Be ion implantation; GaAs MESFET; IC technology; III-V semiconductor; LSI; buried p-layer; large-scale integration; semiconductor doping; uniform threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840069
  • Filename
    4248634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=991148