DocumentCode
991207
Title
Monolithically integrated In0.53Ga0.47As-PIN/InP-MISFET photoreceiver
Author
Kasahara, K. ; Hayashi, Jun´ichiro ; Makita, Kikuo ; Taguchi, Katsuhisa ; Suzuki, A. ; Nomura, Hideyuki ; Matushita, S.
Author_Institution
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Volume
20
Issue
8
fYear
1984
Firstpage
314
Lastpage
315
Abstract
In0.53Ga0.47As PIN photodiode and InP MISFET were monolithically integrated on an Fe-doped semi-insulating InP substrate. Photoreceiver sensitivities were measured at 100 Mbit/s NRZ pseudorandom signals.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; monolithic integrated circuits; optical communication equipment; photodetectors; photodiodes; 100 Mbit/s; Fe doped semiinsulating substrate; III-V semiconductor; In0.53Ga0.47As; InP MISFET; MOSFET; linear IC; monolithic IC; optical communication equipment; optoelectronic devices; p-i-n photodiode; photodetectors; photoreceiver; sensitivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840213
Filename
4248642
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