DocumentCode
991230
Title
Large-signal capabilities and analysis of distributed amplifiers
Author
Gamand, P. ; Crosnier, Y. ; Gelin, P.
Author_Institution
Universitéde Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
Volume
20
Issue
8
fYear
1984
Firstpage
317
Lastpage
319
Abstract
In the letter experimental results are presented which show that distributed amplifiers can be used for power applications. These results are verified by comparing an analytic model predicted using SPICE 2 simulation with measurements between 0.3 and 12 GHz. It appears that a very broad band can be achieved and that the distributed amplifiers keep their self matching properties even under large-signal operation. Distributed-amplifier characteristics, under small-signal operations, are now well known.1¿4 However, recent improvements in GaAs FET technology have created new prospects in large-signal and high-frequency conditions. To our knowledge, although some experimental results have been published3, no theoretical study has been carried out for large-signal conditions. The letter provides such a study.
Keywords
III-V semiconductors; Schottky gate field effect transistors; distributed parameter networks; gallium arsenide; microwave amplifiers; nonlinear network analysis; power amplifiers; solid-state microwave circuits; 0.3 to 12 GHz measurements; GaAs; III-V semiconductors; MESFET; SHF; SPICE 2 simulation; UHF; analytic model; distributed amplifiers; high-frequency conditions; large-signal operation; nonlinear network analysis; power amplifiers; self matching properties; solid-state microwave circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840215
Filename
4248645
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