• DocumentCode
    991230
  • Title

    Large-signal capabilities and analysis of distributed amplifiers

  • Author

    Gamand, P. ; Crosnier, Y. ; Gelin, P.

  • Author_Institution
    Universitéde Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
  • Volume
    20
  • Issue
    8
  • fYear
    1984
  • Firstpage
    317
  • Lastpage
    319
  • Abstract
    In the letter experimental results are presented which show that distributed amplifiers can be used for power applications. These results are verified by comparing an analytic model predicted using SPICE 2 simulation with measurements between 0.3 and 12 GHz. It appears that a very broad band can be achieved and that the distributed amplifiers keep their self matching properties even under large-signal operation. Distributed-amplifier characteristics, under small-signal operations, are now well known.1¿4 However, recent improvements in GaAs FET technology have created new prospects in large-signal and high-frequency conditions. To our knowledge, although some experimental results have been published3, no theoretical study has been carried out for large-signal conditions. The letter provides such a study.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; distributed parameter networks; gallium arsenide; microwave amplifiers; nonlinear network analysis; power amplifiers; solid-state microwave circuits; 0.3 to 12 GHz measurements; GaAs; III-V semiconductors; MESFET; SHF; SPICE 2 simulation; UHF; analytic model; distributed amplifiers; high-frequency conditions; large-signal operation; nonlinear network analysis; power amplifiers; self matching properties; solid-state microwave circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840215
  • Filename
    4248645