DocumentCode
991249
Title
Superlattice optical-cavity multiple-quantum-well (SOC-MQW) lasers grown by molecular-beam epitaxy
Author
Sakaki, H. ; Yoshino, Junki ; Sekiguchi, Yuta ; Sakai, Kenji
Author_Institution
University of Tokyo, Institute of Industrial Science, Tokyo, Japan
Volume
20
Issue
8
fYear
1984
Firstpage
320
Lastpage
321
Abstract
A new-structure multiple-quantum-well laser utilising superlattice waveguides and superlattice barriers is proposed and fabricated by molecular-beam epitaxy using GaAs/AlGaAs. Room-temperature CW operation with a threshold current of 40 mA and external differential quantum efficiency per facet of 20% is demonstrated.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; molecular beam epitaxial growth; p-n heterojunctions; semiconductor growth; semiconductor junction lasers; semiconductor superlattices; 40 mA threshold current; GaAs-AlGaAs; III-V semiconductors; MBE; molecular-beam epitaxy; multiple-quantum-well laser; p-n heterojunctions; room-temperature CW operation; semiconductor lasers; superlattice barriers; superlattice optical cavity; superlattice waveguides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840217
Filename
4248647
Link To Document