Title :
n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport
Author :
Chui, King-Jien ; Ang, Kah-Wee ; Balasubramanian, Narayanan ; Li, Ming-Fu ; Samudra, Ganesh S. ; Yeo, Yee-Chia
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
A novel strained-silicon (Si) n-MOSFET with 50-nm gate length is reported. The strained n-MOSFET features silicon-carbon (Si1-yCy) source and drain (S/D) regions formed by a Si recess etch and a selective epitaxy of Si1-yCy in the S/D regions. The carbon mole fraction incorporated is 0.013. Lattice mismatch of ~0.56% between Si 0.987C0.013 and Si results in lateral tensile strain and vertical compressive strain in the Si channel region, both contributing to substantial electron-mobility enhancement. The conduction-band offset DeltaEc between the Si0.987 C0.013 source and the strained Si channel could also contribute to an increased electron injection velocity nuinj from the source. Implementation of the Si0.987 C0.013 S/D regions for n-MOSFET provides significant drive current IDsat enhancement of up to 50% at a gate length of 50 nm
Keywords :
MOSFET; carbon; electron mobility; silicon; 50 nm; Si recess etch; Si0.987C0.013; carbon mole fraction; carrier transport enhancement; conduction-band offset; drive current; electron injection velocity; electron-mobility enhancement; lateral tensile strain; silicon-carbon source/drain; strained-silicon n-MOSFET; uniaxial tension; vertical compressive strain; Ballistic transport; Electron mobility; Epitaxial growth; Etching; Germanium silicon alloys; Lattices; MOSFET circuits; Silicon carbide; Silicon germanium; Tensile strain; Drive current; injection velocity; n-MOSFETs; uniaxial tension;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.888629