Title :
60 GHz monolithic GaAs front-end circuit for receiver applications
Author :
Barker, G.K. ; Badawi, M.H. ; Mun, Jungtae
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
Abstract :
A millimetre-wave planar mixer diode compatible with GaAs MESFET based integrated circuit fabrication has been developed. Selective ion implantation was used to optimise the diode and FET doping profiles. A novel feature reported here is the use of a deep implanted buried n+ layer to minimise diode series resistance, yielding diode cutoff frequencies in excess of 500 GHz. Monolithic balanced mixer diodes integrated with an MESFET IF amplifier fabricated by this technique have given 5dB conversion loss at 60 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; mixers (circuits); radio receivers; 500 GHz; 60 GHz; EHF; GaAs MESFET; IF amplifier; III-V semiconductors; MMIC; deep implanted buried n+ layer; diode cutoff frequencies; diode series resistance minimisation; doping profile optimisation; front-end circuit; millimetre-wave planar mixer diode; monolithic microwave IC; receiver applications; selective ion implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840226
