Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa

A theoretical study of the response of hole mobility and thermal velocity, both relevant for short channel devices, to [110] uniaxial stress in Si up to 4 GPa of both tension and compression has been conducted. The strained-Si bandstructure was calculated using the kmiddotp method. Effective masses, thermal velocities, and scattering rates were calculated from the bandstructure as a function of stress. Mobilities were then calculated via full band Monte Carlo simulations. Calculated mobilities match experimental and theoretical data from prior work addressing lower degrees of stress. Large increases in both carrier thermal velocities and mobilities were found. In the high-stress regime between 1 and 2 GPa, mobilities exhibit a strong superlinear dependence, and compressive stress becomes more favorable for increasing both mobilities and thermal velocities in pMOS. Improvements in both thermal velocity and mobility finally only begin to rolloff toward apparent saturation as we push the stress toward 4 GPa in these simulations